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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

Identifieur interne : 002D12 ( Main/Repository ); précédent : 002D11; suivant : 002D13

Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

Auteurs : RBID : Pascal:11-0238920

Descripteurs français

Pascal (Inist)
- Electron chaud, Mobilité dérive, Vitesse dérive, Courant impulsionnel, Caractéristique courant tension, Mobilité électron, Champ uniforme, Effet champ électrique, Champ intense, Aluminium Indium Nitrure Mixte, Nitrure d'aluminium, Nitrure de gallium, Gaz électron 2 dimensions, Hétérostructure, Semiconducteur.

English descriptors

KwdEn :
- Aluminium Indium Nitrides Mixed, Aluminium nitride, Drift mobility, Drift velocity, Electric field effects, Electron mobility, Gallium nitride, Heterostructures, High field, Hot electrons, IV characteristic, Pulse current, Semiconductor materials, Two-dimensional electron gas, Uniform field.

Abstract

A nanosecond-pulsed current-voltage technique was applied to study hot-electron transport along the two-dimensional electron gas channel confined at a nominally undoped AlInN/AlN/GaN heterointerface. Hot-electron drift velocity was deduced under the assumptions of uniform longitudinal electric field and field-independent electron sheet density. At a fixed electric field strength, a resonance-type non-monotonous dependence of the velocity on the electron density was found in the investigated range from I to 1.6 × 10¹³ cm^-2. When the electric field increased from 20 kV/cm to 80 kV/cm, the peak velocity increased from ˜1.1 to 2.3 × 10⁷ cm/s, and the position of the resonance shifted from ˜1.1 × 10¹³ cm^-2 to ˜1.2 × 10¹³ cm^-2, respectively. The resonance position correlates with that for the fastest decay of hot phonons known from independent experiment.

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Pascal:11-0238920

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN</title>
<author><name sortKey="Ardaravicius, L" uniqKey="Ardaravicius L">L. Ardaravicius</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute of Center for Physical Science and Technology, A. Goštauto 11</s1>
<s2>01108 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
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<country>Lituanie</country>
<wicri:noRegion>01108 Vilnius</wicri:noRegion>
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</author>
<author><name sortKey="Liberis, J" uniqKey="Liberis J">J. Liberis</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute of Center for Physical Science and Technology, A. Goštauto 11</s1>
<s2>01108 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
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<country>Lituanie</country>
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</author>
<author><name sortKey="Kiprijanovic, O" uniqKey="Kiprijanovic O">O. Kiprijanovic</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute of Center for Physical Science and Technology, A. Goštauto 11</s1>
<s2>01108 Vilnius</s2>
<s3>LTU</s3>
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<country>Lituanie</country>
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<author><name sortKey="Matulionis, A" uniqKey="Matulionis A">A. Matulionis</name>
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<s3>LTU</s3>
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<author><name sortKey="Wu, M" uniqKey="Wu M">M. Wu</name>
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<author><name sortKey="Morkoc, H" uniqKey="Morkoc H">H. Morkoc</name>
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<s2>Richmond, Virginia 23284</s2>
<s3>USA</s3>
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<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0238920 INIST</idno>
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<title level="j" type="abbreviated">Phys. status solidi, Rapid res. letters : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Indium Nitrides Mixed</term>
<term>Aluminium nitride</term>
<term>Drift mobility</term>
<term>Drift velocity</term>
<term>Electric field effects</term>
<term>Electron mobility</term>
<term>Gallium nitride</term>
<term>Heterostructures</term>
<term>High field</term>
<term>Hot electrons</term>
<term>IV characteristic</term>
<term>Pulse current</term>
<term>Semiconductor materials</term>
<term>Two-dimensional electron gas</term>
<term>Uniform field</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electron chaud</term>
<term>Mobilité dérive</term>
<term>Vitesse dérive</term>
<term>Courant impulsionnel</term>
<term>Caractéristique courant tension</term>
<term>Mobilité électron</term>
<term>Champ uniforme</term>
<term>Effet champ électrique</term>
<term>Champ intense</term>
<term>Aluminium Indium Nitrure Mixte</term>
<term>Nitrure d'aluminium</term>
<term>Nitrure de gallium</term>
<term>Gaz électron 2 dimensions</term>
<term>Hétérostructure</term>
<term>Semiconducteur</term>
</keywords>
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<front><div type="abstract" xml:lang="en">A nanosecond-pulsed current-voltage technique was applied to study hot-electron transport along the two-dimensional electron gas channel confined at a nominally undoped AlInN/AlN/GaN heterointerface. Hot-electron drift velocity was deduced under the assumptions of uniform longitudinal electric field and field-independent electron sheet density. At a fixed electric field strength, a resonance-type non-monotonous dependence of the velocity on the electron density was found in the investigated range from I to 1.6 × 10<sup>13</sup>
 cm<sup>-2</sup>
. When the electric field increased from 20 kV/cm to 80 kV/cm, the peak velocity increased from ˜1.1 to 2.3 × 10<sup>7</sup>
 cm/s, and the position of the resonance shifted from ˜1.1 × 10<sup>13</sup>
 cm<sup>-2</sup>
 to ˜1.2 × 10<sup>13</sup>
 cm<sup>-2</sup>
, respectively. The resonance position correlates with that for the fastest decay of hot phonons known from independent experiment.</div>
</front>
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<fA11 i1="01" i2="1"><s1>ARDARAVICIUS (L.)</s1>
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<fA11 i1="02" i2="1"><s1>LIBERIS (J.)</s1>
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<fA11 i1="06" i2="1"><s1>MORKOC (H.)</s1>
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<fA14 i1="01"><s1>Semiconductor Physics Institute of Center for Physical Science and Technology, A. Goštauto 11</s1>
<s2>01108 Vilnius</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Virginia Commonwealth University</s1>
<s2>Richmond, Virginia 23284</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA45><s0>11 ref.</s0>
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<fC01 i1="01" l="ENG"><s0>A nanosecond-pulsed current-voltage technique was applied to study hot-electron transport along the two-dimensional electron gas channel confined at a nominally undoped AlInN/AlN/GaN heterointerface. Hot-electron drift velocity was deduced under the assumptions of uniform longitudinal electric field and field-independent electron sheet density. At a fixed electric field strength, a resonance-type non-monotonous dependence of the velocity on the electron density was found in the investigated range from I to 1.6 × 10<sup>13</sup>
 cm<sup>-2</sup>
. When the electric field increased from 20 kV/cm to 80 kV/cm, the peak velocity increased from ˜1.1 to 2.3 × 10<sup>7</sup>
 cm/s, and the position of the resonance shifted from ˜1.1 × 10<sup>13</sup>
 cm<sup>-2</sup>
 to ˜1.2 × 10<sup>13</sup>
 cm<sup>-2</sup>
, respectively. The resonance position correlates with that for the fastest decay of hot phonons known from independent experiment.</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Vitesse dérive</s0>
<s5>04</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Drift velocity</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Courant impulsionnel</s0>
<s5>06</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Pulse current</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electron mobility</s0>
<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Aluminium Indium Nitrure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Aluminium Indium Nitrides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0>
<s5>15</s5>
</fC03>
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<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Aluminio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>16</s5>
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</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
</fC03>
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<s5>18</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>19</s5>
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<s5>19</s5>
</fC03>
<fN21><s1>157</s1>
</fN21>
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Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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